Magnesium adsorption and incorporation in InN (0 0 01 ) and (0001) surfaces: A first-principles studyBELABBES, A; KIOSEOGLOU, J; KOMNINOU, Ph et al.Applied surface science. 2009, Vol 255, Num 20, pp 8475-8482, issn 0169-4332, 8 p.Article

Investigation of the effects of atomic oxygen exposure on the electrical and field emission properties of ZnO nanowiresZHAO, C. X; HUANG, K; DENG, S. Z et al.Applied surface science. 2013, Vol 270, pp 82-89, issn 0169-4332, 8 p.Article

Burgers vector analysis by three-dimensional laser-scattering tomographyALBRECHT, M; NAUMANN, M.Journal of crystal growth. 2008, Vol 310, Num 18, pp 4031-4034, issn 0022-0248, 4 p.Article

Formation mechanisms of GaN nanorods grown on Si(1 1 1) substratesKWON, Y. H; LEE, K. H; RYU, S. Y et al.Applied surface science. 2008, Vol 254, Num 21, pp 7014-7017, issn 0169-4332, 4 p.Article

Hydrostatic pressure effects on the binding and transition energies for Wannier excitons in GaAs/Ga_1-xAl_xAs quantum wellsARISTIZABAL, P; RESTREPO, R. L; OSPINA, W et al.Microelectronics journal. 2008, Vol 39, Num 11, pp 1261-1263, issn 0959-8324, 3 p.Conference Paper

Physical properties of Sb-doped CdSe thin films by thermal evaporation methodALI, Mazhar; SYED, Waqar A. A; ZUBAIR, M et al.Applied surface science. 2013, Vol 284, pp 482-488, issn 0169-4332, 7 p.Article

Effect of Cu ions on the morphology, structure and luminescence properties of ZnO nanorod arrays prepared by hydrothermal methodJIANPING XU; PEI LIU; SHAOBO SHI et al.Applied surface science. 2012, Vol 258, Num 18, pp 7118-7125, issn 0169-4332, 8 p.Article

Silicon-doping induced strain of AIN layers : a comparative luminescence and Raman studyPRINZ, Günther M; FENEBERG, Martin; SCHIRRA, Martin et al.Physica status solidi. Rapid research letters (Print). 2008, Vol 2, Num 5, pp 215-217, issn 1862-6254, 3 p.Article

An investigation of the oxidized Ni/InAs interfaceVENTER, A; BOTHA, J. R; SWART, H. C et al.Physica. B, Condensed matter. 2009, Vol 404, Num 22, pp 4452-4456, issn 0921-4526, 5 p.Conference Paper

Shallow levels in virgin hydrothermally grown n-type ZnO studied by thermal admittance spectroscopySCHIFANO, R; MONAKHOV, E. V; SVENSSON, B. G et al.Physica. B, Condensed matter. 2009, Vol 404, Num 22, pp 4344-4348, issn 0921-4526, 5 p.Conference Paper

Optical and structural characterization of GaSb and Te-doped GaSb single crystalsTIRADO-MEJIA, L; VILLADA, J. A; DE LOS RIOS, M et al.Physica. B, Condensed matter. 2008, Vol 403, Num 21-22, pp 4027-4032, issn 0921-4526, 6 p.Article

Relaxation and recovery processes of Al_XGa₁__XN grown on AIN underlying layerASAI, Toshiaki; NAGATA, Kensuke; MORI, Toshiaki et al.Journal of crystal growth. 2009, Vol 311, Num 10, pp 2850-2852, issn 0022-0248, 3 p.Conference Paper

Effect of ion irradiation on current―voltage characteristics of Au/n-GaN Schottky diodesBARANWAL, V; KUMAR, S; PANDEY, A. C et al.Journal of alloys and compounds. 2009, Vol 480, Num 2, pp 962-965, issn 0925-8388, 4 p.Article

Spontaneous formation of a cluster of InAs dots along a ring-like zone on GaAs (10 0) by droplet epitaxyNODA, T; MANO, T; KURODA, T et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1836-1838, issn 0022-0248, 3 p.Conference Paper

A computational study of ion-implanted beryllium diffusion in gallium arsenideKOUMETZ, S. D; PESANT, J.-C; DUBOIS, C et al.Computational materials science. 2008, Vol 43, Num 4, pp 902-908, issn 0927-0256, 7 p.Article

Structural, chemical and magnetic investigations of polycrystalline Zn_1―xMn_xODESHMUKH, Alka V; PATIL, S. I; YUSUF, S. M et al.Journal of magnetism and magnetic materials. 2010, Vol 322, Num 5, pp 536-541, issn 0304-8853, 6 p.Article

Li-related defects in ZnO: Hybrid functional calculationsCARVALHO, A; ALKAUSKAS, A; PASQUARELLO, Alfredo et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4797-4799, issn 0921-4526, 3 p.Conference Paper

Modification of the surface state and doping of CdTe and CdZnTe crystals by pulsed laser irradiationGNATYUK, V. A; AOKI, T; VLASENKO, O. I et al.Applied surface science. 2009, Vol 255, Num 24, pp 9813-9816, issn 0169-4332, 4 p.Conference Paper

Synthesis of GaN crystal by the reaction of Ga with Li₃N in NH₃ atmosphereHIRANO, Takayoshi; MABUCHI, Akira; SUGIURA, Takashi et al.Journal of crystal growth. 2009, Vol 311, Num 10, pp 3040-3043, issn 0022-0248, 4 p.Conference Paper

The effects of oxygen partial pressure on the microstructures and photocatalytic property of ZnO nanoparticlesHUIHU WANG; CHANGSHENG XIE.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 8, pp 2724-2729, issn 1386-9477, 6 p.Article

New method for fabricating ZnO nanowires deposited onto CdTe substratesPLAZA, J. L; MARTINEZ, O; DE DIOS, S et al.Journal of crystal growth. 2009, Vol 312, Num 1, pp 64-67, issn 0022-0248, 4 p.Article

Influence of the surface reconstruction on the growth of InP on SrTiO₃(0 01)CHENG, J; REGRENY, P; LARGEAU, L et al.Journal of crystal growth. 2009, Vol 311, Num 4, pp 1042-1045, issn 0022-0248, 4 p.Article

A new p-and n-dopable selenophene derivative and its electrochromic propertiesCETIN, Gülben Ardahan; BALAN, Abidin; DURMUG, Asuman et al.Organic electronics (Print). 2009, Vol 10, Num 1, pp 34-41, issn 1566-1199, 8 p.Article

Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (111) substrates by using hydride vapor-phase epitaxyLEE, K. H; LEE, J. Y; KWON, Y. H et al.Journal of crystal growth. 2009, Vol 311, Num 2, pp 244-248, issn 0022-0248, 5 p.Article

Study of microstructural evolutions in phosphorus-doped ZnO films grown by pulsed laser depositionJANG, J. H; KIM, H. S; NORTON, D. P et al.Journal of crystal growth. 2009, Vol 311, Num 11, pp 3143-3146, issn 0022-0248, 4 p.Article